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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION With TO-3 package High power dissipation High breakdown voltage APPLICATIONS For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter OND IC CONDITIONS TOR UC VALUE 350 250 6 2 UNIT V V V A W ae ae Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC1106 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=350V; IE=0 0.1 mA IEBO Emitter cut-off current hFE DC current gain VEB=5V; IC=0 0.1 mA IC=0.2A ; VCE=5V HAN INC SEM GE OND IC TOR UC 30 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1106 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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